This article is cited in 2 papers

Brief Communications

Electron-beam-pumped semiconductor laser operating at low acceleration voltages

O. V. Bogdankevich, N. A. Borisov, V. I. Borodulin, V. F. Pevtsov, V. I. Shveĭkin


Abstract: An investigation was made of the threshold characteristics of a laser pumped transversely by an electron beam accelerated by voltages below 25 kV. The target was a three-layer heterostructure with a thin active region between two wide-gap layers. The lowest threshold energy of the electron beam was 10 keV at T ≈ 90 °K (the corresponding threshold value of the current density was j_th = 0.45 A/cm²) and 12 keV at T ≈ 300 °K (j_th ≈ 0.9A/cm²).

UDC: 621.375.826+621.315.59

PACS: 42.55.Px

Received: 08.10.1980

 English version: Soviet Journal of Quantum Electronics, 1981, 11:5, 675–677

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