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JOURNALS // Kvantovaya Elektronika // Archive

Kvantovaya Elektronika, 1981 Volume 8, Number 5, Pages 1124–1126 (Mi qe7018)

Brief Communications

Influence of an oxide film on the surfaces of Ga1–xAlxAs solid solutions on the threshold current density of an electron-beam-pumped laser

O. V. Bogdankevich, N. A. Borisov, V. F. Pevtsov


Abstract: A study was made of the influence of the duration of etching of Ga1–xAlxAs solid solutions on the threshold current density of a laser pumped transversely by an electron beam. It was found that the surface treatment in a weak solution of ammonia made it possible to reduce by a factor of about 1.5 the threshold current density for a laser with a waveguide resonator structure when the electron beam energy was less than 15 keV.

UDC: 621.375.826+621.315.59

PACS: 42.55.Px

Received: 08.10.1980


 English version:
Soviet Journal of Quantum Electronics, 1981, 11:5, 672–673

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© Steklov Math. Inst. of RAS, 2026