Fabrication and investigation of GaInPAs/InP heterolasers

D. Akhmedov, I. Ismailov, N. Shokhudzhaev


Abstract: Details of the method of fabricating GalnPAs/lnP heterolasers emitting at the ~1550 nm wavelength are given and results of an investigation of the threshold, spectral, and other characteristics of heterolasers in the 1000–1590 nm range are presented. A correlation is established between the threshold characteristics and the photon energy for GaInPAs/InP heterolasers. From the radiation spectrum and the results of x-ray microanalysis it is established that at the boundaries of the Ga_xIn_1–xP_1–y As_y/InP (x = 0.09, y = 0.2) heterojunctions there is a transition layer of variable composition which strongly influences the threshold current densities.

UDC: 621.315.595

PACS: 42.55.Px, 42.60.By, 42.60.He

Received: 16.07.1982

 English version: Soviet Journal of Quantum Electronics, 1982, 12:12, 1568–1570

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