This article is cited in 7 papers

Interaction of laser radiation with matter. Laser plasma

Pulsed laser deposition of thin In_xGa_1–xAs films

V. N. Burimov, A. N. Zherikhin, V. L. Popkov

Institute of Laser and Information Technologies, Russian Academy of Sciences, Troitsk

Abstract: An investigation was made of the distribution of the velocities of the droplets and of the atomic component in a plasma plume formed during laser ablation of InAs and GaAs semiconductor targets. The velocity of atoms was at least 6 times greater than the velocity of droplets. A mechanical velocity filter for the removal of droplets from the plasma plume was constructed. The use of a composite target made it possible to grow epitaxial In_xGa_1–xAs films of different compositions.

PACS: 68.55.Bd, 68.55.Nq, 42.62.Cf

Received: 01.01.1996

 English version: Quantum Electronics, 1996, 26:1, 71–73

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