Lasers

Measurement of the linewidth enhancement factor of injection lasers with a strained active layer

O. V. Danilina, A. S. Logginov

M. V. Lomonosov Moscow State University, Faculty of Physics

Abstract: A method for determination of the linewidth enhancement factor α of semiconductor injection lasers is proposed. Experimental values of α, obtained at carrier densities corresponding to pump currents near the threshold value, are reported for InGaAs/GaAs lasers with a strained active layer and for unstrained quantum-well GaAs/GaAIAs lasers. It is shown that in the presence of strain the factor α is 1.9 times less than for conventional quantum-well lasers.

PACS: 42.55.Px, 42.60.Lh

Received: 24.02.1995

 English version: Quantum Electronics, 1995, 25:11, 1043–1044

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