RUS  ENG
Full version
JOURNALS // Kvantovaya Elektronika // Archive

Kvantovaya Elektronika, 1982 Volume 9, Number 6, Pages 1264–1267 (Mi qe5228)

This article is cited in 2 papers

Brief Communications

Determination of the parameters of injection laser amplifiers based on GaAlAs heterostructures from superluminescence characteristics

I. S. Goldobin, A. T. Semenov, V. P. Tabunov, S. D. Yakubovich


Abstract: A modified method for the determination of the amplifying characteristics of active media from the dependence of the amplified spontaneous radiation (superluminescence) spectrum on the geometry of the active region was applied to stripe heterolasers which had no feedback. The spectral dependences were obtained for the main parameters of laser amplifiers: the gain, sensitivity, and dynamic range of linear amplification of a narrow-band input signal. These parameters of heterojunction amplifiers were praaically as good as those of homostructure amplifiers operating at cryogenic temperatures.

UDC: 621.375.8.038.825.4

PACS: 42.55.Px, 73.40.Lq

Received: 23.08.1981


 English version:
Soviet Journal of Quantum Electronics, 1982, 12:6, 800–802

Bibliographic databases:


© Steklov Math. Inst. of RAS, 2026