Brief Communications

Quantum size effects in a periodic InSb–GaAs structure and in Ga_xln_1–xAs_ySb_1–y films prepared by laser evaporation

K. È. Avdzhyan, A. G. Aleksanyan, N. Sh. Belluyan, R. K. Kazaryan, L. L. Matevosyan


Abstract: It was found that a periodic InSb-GaAs structure had the properties of a size-quantized InSb film on its own. The quantum size effect was observed for the first time in Ga_xln_1–xAs_ySb_1–y films.

UDC: 621.373.826.038.825.4

PACS: 81.15.Ef, 42.62.-b, 78.66.Fd

Received: 12.11.1983

 English version: Soviet Journal of Quantum Electronics, 1984, 14:6, 854–655

Bibliographic databases:

•