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JOURNALS // Kvantovaya Elektronika // Archive

Kvantovaya Elektronika, 1983 Volume 10, Number 11, Pages 2352–2355 (Mi qe4979)

This article is cited in 2 papers

Brief Communications

Characteristics of radiation emitted by GaSb/GaAlAsSb injection heterolasers

A. S. Adlivankin, N. D. Zhukov, V. M. Raĭgorodskiĭ, S. A. Sosnovskiĭ, L. I. Shestak


Abstract: An experimental investigation was made of the emission characteristics of GaSb/GaAlAsSb injection heteroiasers in the temperature range from –70°C to +70°C. A study was made of the relationship between the temperature dependences of the threshold current and of the differential quantum efficiency, on the one hand, and the temperature-induced changes in the near-field pattern and in the internal parameters of the lasers, on the other. Continuous stimulated emission was achieved right up to –10°C.

UDC: 621.378.325

PACS: 42.55.Px

Received: 08.02.1983


 English version:
Soviet Journal of Quantum Electronics, 1983, 13:11, 1532–1534

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