This article is cited in 2 papers

Brief Communications

Self-switching in single-heterojunction injection lasers

L. P. Ivanov, A. S. Logginov, V. P. Samoilov, K. Ya. Senatorov


Abstract: An investigation was made of self-switching in injection lasers with a single Al_xGa_1–xAs–GaAs heterojunction operating near critical temperature. A characteristic feature of the self-switching operation was the penetration of the radiation field into the n-type region of the laser diode and the deviation of the angular distribution of the output radiation from the normal to the resonator mirror. The experimental results were in agreement with the expected self-switching in laser diodes with weak waveguide properties.

UDC: 621.378.3

PACS: 42.55.Px, 42.60.Da, 42.60.Gd, 42.60.By, 42.70.Hj, 42.70.Nq

Received: 09.03.1972
Revised: 05.09.1972

 English version: Soviet Journal of Quantum Electronics, 1973, 2:5, 461–463