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JOURNALS // Kvantovaya Elektronika // Archive

Kvantovaya Elektronika, 1983 Volume 10, Number 7, Pages 1461–1464 (Mi qe4391)

This article is cited in 10 papers

Brief Communications

Influence of the structure of a gain profile on the lasing dynamics of a solid-state ring laser

N. I. Polushkin, P. A. Khandokhin, Ya. I. Khanin


Abstract: A mechanism is proposed for low-frequency self-modulation of the radiation emitted by a solid-state ring laser. This mechanism is based on the fine structure of the gain profile. A model of a laser with two closely spaced gain profiles is used to find the conditions of instability of unidirectional lasing. A numerical solution of a system of equations describing this situation confirms the correctness of the conclusions of this analysis and it shows that the processes described by the proposed model of a solid-state ring laser are indeed observed experimentally.

UDC: 621.373.826.038.825

PACS: 42.55.Rz

Received: 19.07.1982


 English version:
Soviet Journal of Quantum Electronics, 1983, 13:7, 950–951

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© Steklov Math. Inst. of RAS, 2026