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JOURNALS // Kvantovaya Elektronika // Archive

Kvantovaya Elektronika, 1991 Volume 18, Number 11, Pages 1311–1312 (Mi qe4376)

This article is cited in 2 papers

Lasers

Determination of the dependence of the refractive index of the active region of an injection laser on the carrier density

I. I. Vinogradov, O. V. Danilina, A. E. Kosykh, A. S. Logginov


Abstract: A method was developed for determination of the dependence of the refractive index n of the active region of an injection laser on the carrier density N. The ratio ΔnN was determined for AlGaAs/GaAs injection lasers with different thicknesses of the active region. It was found experimentally that the value of ΔnN for a mode emitted by a quantum-well laser with an active layer ~ 20 nm thick was an order of magnitude less than for conventional injection lasers.

UDC: 621.373.826.038.825.4

PACS: 42.55.Px, 42.60.Jf, 81.15.Gh

Received: 13.06.1991


 English version:
Soviet Journal of Quantum Electronics, 1991, 21:11, 1195–1196

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© Steklov Math. Inst. of RAS, 2026