Brief Communications

Investigation of the refractive index profiles of multilayer Ga_1–xAl_xAs laser heterostructures

O. V. Bogdankevich, A. N. Georgobiani, V. G. Solin, P. A. Todua


Abstract: The method of spatial modulation of the reflection of light from a cleaved section was used to find the refractive index profiles of three- and four-layer Ga_1–xAl_xAs laser heterostructures (with GaAs substrates). The dependences of the concentration of Al in Ga_1–xAl_xAs solid solutions and of the band gap on the coordinate perpendicular to the plane of growth were calculated. A spatial resolution of ~0.4 μ was achieved, the sensitivity in the determination of the gradient of the refractive index n was ~10^–4 μ^–1 and the absolute error in the measurement of the layer thicknesses was ~0.05 μ (for layers more than 0.4 μ thick).

UDC: 621.372.826

PACS: 78.20.Dj, 78.65.-s, 73.40.Lq, 42.55.Px

Received: 31.03.1982

 English version: Soviet Journal of Quantum Electronics, 1983, 13:2, 240–241

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