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JOURNALS // Kvantovaya Elektronika // Archive

Kvantovaya Elektronika, 1991 Volume 18, Number 2, Pages 175–176 (Mi qe3738)

Lasers

Increase of the threshold current of InGaAsP heterolasers during aging at elevated temperatures

R. I. Andreeva, A. A. Kochetkov


Abstract: An investigation was made of the service life of InGaAsP heterolasers (σ = 1.3 μm) over periods of 3 X 104 h at Ò = 65 °C. Expressions describing an increase in the threshold current during tests were obtained. It was found that the relative change in the threshold current could be used in quality control of heterolasers and in selection of samples with a long expected service life.

UDC: 621.373.826.038.825.4

PACS: 42.55.Px, 42.60.By, 42.60.Jf

Received: 08.05.1990


 English version:
Soviet Journal of Quantum Electronics, 1991, 21:2, 155–156

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© Steklov Math. Inst. of RAS, 2026