Letters to the editor

Modelling and experimental study of AlGaAs\/GaAs injection lasers with electron superlattice barriers, emitting at 780 — 808 nm

V. V. Bezotosnyi^a, P. V. Karga^a, Zhang Zheng De^b, Zhang Qi Lin^b, Guan Xin Guo<sup>b

a</sup> P. N. Lebedev Physical Institute, Russian Academy of Sciences, Moscow
^b Rzhanov Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Sciences, Novosibirsk

Abstract: A model of an AlGaAs\/GaAs laser with multilayer interference barriers, used to reflect electron waves and enhance carrier confinement, was analysed. A double heterostructure laser emitting at 780 — 808 nm was optimised. This heterostructure had electron superlattice barriers with separate electron and photon confinement. Low-pressure epitaxial growth of metal-organic compounds produced double-sided separate-confinement AlGaAs\/GaAs heterostructures with electron superlattice barriers of three types, as well as conventional separate-confinement heterostructures. Stripe lasers with nitride insulation and stripe widths 100 and 200 μm were made from these heterostructures. For the lasers with electron superlattice barriers, an active layer 40 nm thick, and a cavity 0.4 — 0.5 mm long, the minimum theshold current density was 0.3 kA cm^–2 and the temperature constant was T₀ = 220 K. For the lasers of the same geometry, but without the barriers the corresponding values were 0.42 kA cm^–2 and T₀ = 160 K.

PACS: 42.55.Px, 78.66.Fd, 68.65.+g

 English version: Quantum Electronics, 1995, 25:3, 200–202

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