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JOURNALS // Kvantovaya Elektronika // Archive

Kvantovaya Elektronika, 1993 Volume 20, Number 9, Pages 837–838 (Mi qe3155)

Lasers

Determining the activation energy of the degradation of InGaAsP heterojunction lasers at λ = 1.55 μm

R. I. Andreeva, A. A. Kochetkov, V. N. Nikolaev


Abstract: The service lifetime of InGaAsP heterojunction lasers operating at λ = 1.55 μm has been tested. Stepwise tests of this sort reveal the activation energy for the degradation process in the temperature interval 50–70 °C.

UDC: 621.373.826.038.825.4

PACS: 42.55.Px, 42.60.By, 42.60.Lh

Received: 26.02.1993


 English version:
Quantum Electronics, 1993, 23:9, 725

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© Steklov Math. Inst. of RAS, 2026