RUS
ENG
Full version
JOURNALS
// Kvantovaya Elektronika
// Archive
Kvantovaya Elektronika,
1993
Volume 20,
Number 9,
Pages
837–838
(Mi qe3155)
Lasers
Determining the activation energy of the degradation of InGaAsP heterojunction lasers at λ = 1.55 μm
R. I. Andreeva
,
A. A. Kochetkov
,
V. N. Nikolaev
Abstract:
The service lifetime of InGaAsP heterojunction lasers operating at λ = 1.55 μm has been tested. Stepwise tests of this sort reveal the activation energy for the degradation process in the temperature interval 50–70
°
C.
UDC:
621.373.826.038.825.4
PACS:
42.55.Px
,
42.60.By
,
42.60.Lh
Received:
26.02.1993
Fulltext:
PDF file (83 kB)
English version:
Quantum Electronics, 1993,
23
:9,
725
Bibliographic databases:
©
Steklov Math. Inst. of RAS
, 2026