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JOURNALS // Kvantovaya Elektronika // Archive

Kvantovaya Elektronika, 1993 Volume 20, Number 1, Pages 45–46 (Mi qe2932)

Lasers

Changes in the threshold current of an InGaAsP heterojunction laser (λ = 1.55 μm) due to aging and irradiation

R. I. Andreeva, A. A. Kochetkov, V. N. Nikolaev


Abstract: The degradation of cw InGaAsP heterojunction lasers (λ = 1.55 μm) due to aging and γ bombardment has been studied. A parameter which is a measure of the equivalence of the kinetics of these processes has been determined.

UDC: 621.373.826.038.825.4

PACS: 42.55.Px, 42.60.Jf, 73.40.Kp

Received: 16.07.1992


 English version:
Quantum Electronics, 1993, 23:1, 38–39

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© Steklov Math. Inst. of RAS, 2026