This article is cited in 3 papers

Laser applications and other topics in quantum electronics

Formation of p–n junctions and ohmic contacts with GaAs by laser solid-phase diffusion

A. Yu. Bonchik^a, S. G. Kiyak^a, G. N. Mikhailova^b, A. V. Pokhmurskaya^a, G. V. Savitskii<sup>a

a</sup> Institute of Applied Mathematics and Mechanics, National Academy of Sciences of Ukraine, Donetsk
^b A. M. Prokhorov General Physics Institute, Russian Academy of Sciences, Moscow

Abstract: An experimental investigation was made of the electrophysical properties of p–n junctions and ohmic contacts formed by laser solid-phase diffusion of, respectively, zinc and a contact group of elements (Au—Au : Ge) in a plate of n-type GaAs. The diffusion was induced by radiation from a cw CO₂ laser. The zero-bias resistance of the p–n junctions was ~10¹⁰ Ω and the leakage current did not exceed 1 nA under a reverse bias voltage of 8 V. A typical resistance of the nonrectifying contacts was 5 × 10^–7 Ω cm².

PACS: 42.62.Cf, 81.40.Gh, 85.30.Kk

 English version: Quantum Electronics, 1995, 25:1, 85–86

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