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JOURNALS // Kvantovaya Elektronika // Archive

Kvantovaya Elektronika, 1994 Volume 21, Number 10, Pages 991–993 (Mi qe213)

This article is cited in 6 papers

Laser applications and other topics in quantum electronics

Slanted superimposed diffraction gratings formed by an electron beam in amorphous arsenic sulfide films

S. A. Sergeev, A. A. Simashkevich, S. D. Shutov

Institute of Applied Physics Academy of Sciences of Moldova, Kishinev

Abstract: Superimposed phase diffraction gratings were formed by an electron beam in amorphous arsenic sulfide (As2S3) films. The number of superimposed gratings was N = 2–10 and the angle of slant was π/N. The electron-beam-stimulated modulation of the refractive index n1 = 10-3–10-2 of the superimposed gratings was studied as a function of the number of these gratings. The main factor which limited the number of mutually independent superimposed gratings was the limit of linearity of the response of the recording medium at the nodal regions where the total radiation dose was maximal.

PACS: 42.79.Dj, 81.40.Tv

Received: 28.01.1994


 English version:
Quantum Electronics, 1994, 24:10, 924–926

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