K. S. Zhuravlev, A. V. Tsarev, D. V. Gulyaev, E. A. Kolosovskii, V. S. Arykov, I. V. Yunusov, S. V. Ishutkin, A. A. Sheinberger, “Anomalous effect of the InGaAs top layer on the optical properties of a quantum-dimensional waveguide structure for electro-optical modulators based on indium phosphide”, Kvantovaya Elektronika, 2025, Volume 55, Number 1,Pages <nobr>30

Quantum Technologies

Anomalous effect of the InGaAs top layer on the optical properties of a quantum-dimensional waveguide structure for electro-optical modulators based on indium phosphide

K. S. Zhuravlev^ab, A. V. Tsarev^ab, D. V. Gulyaev^a, E. A. Kolosovskii^a, V. S. Arykov^c, I. V. Yunusov^c, S. V. Ishutkin^c, A. A. Sheinberger^c

^a Rzhanov Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Sciences, Novosibirsk
^b Novosibirsk State University
^c Tomsk State University of Control Systems and Radioelectronics

Abstract: We report an experimental and theoretical study of the mechanisms of optical losses in a quantum-well waveguide structure for indium phosphide-based electro-optical modulators. It is shown that the presence of an InGaAs cap layer with a high refractive index and high optical loss can lead to anomalously high attenuation of the fundamental TE₀ mode. The attenuation is observed near the degeneracy of the dispersion curves of the first two TE polarization modes, which manifests itself at InGaAs cap layer thicknesses of approximately 0.31 μm. The numerical simulation data are in good agreement with the experimentally measured optical losses in such structures.

Keywords: electro-optical modulator, indium phosphide, Stark effect, multiple quantum well, optical losses.

Received: 03.12.2024
Revised: 03.03.2025
Accepted: 07.03.2025