Nanostructures

The effect of quantum-dimensional effects of tantalum nanoparticles in thin-film structures based on Schottky diodes on an increase in photoresponse in the IR range

K. M. Balakhnev^a, D. V. Bortko^a, V. A. Shilov^a, O. S. Vasil'ev^a, P. V. Borisyuk^a, Yu. Yu. Lebedinskii<sup>ab

a</sup> National Engineering Physics Institute "MEPhI", Moscow
^b Moscow Institute of Physics and Technology (National Research University), Dolgoprudny, Moscow Region

Abstract: An improvement in the sensitivity of Schottky photodetectors based on the Ag/n-Si junction through the addition of a Ta nanocluster thin-film coating is considered. The methodology for creating such photodetectors is presented, including the fabrication of coatings and an evaluation of their influence on the photovoltaic characteristics of devices. The study showed that the introduction of the Ta nanocluster coating layer led to a 29% increase in the sensitivity of Schottky photodetectors compared to devices without such a coating. This improvement is attributed to the optimization of the characteristics of the Schottky barrier, which is confirmed by the analysis of the response of the studied devices to thermal radiation.

Keywords: nanocluster thin films, Ta, Ag, Schottky barrier, Schottky diodes, photodetectors, IR radiation.

Received: 02.08.2024