A selection of papers presented at the IX International Symposium on Coherent Optical Radiation of Semiconductor Compounds and Structures (COIPSS-2023) (November 29-December 1, 2023, Moscow)

Development and Research of High-Power Laser Diodes in the 960-980 nm Spectral Range Based on InGaAs/AlGaAs/GaAs

A. V. Fomin, E. V. Ershov, S. A. Kryukov

Russian Federal Nuclear Center E. I. Zababakhin All-Russian Scientific Research Institute of Technical Physics, Snezhinsk

Abstract: As part of the development of high-power multimode laser diodes in the 960-980 nm spectral range, optimization of the heterostructure and mesa-stripe chip design was carried out to increase output radiation power and efficiency. The effects of increasing the energy depth of the quantum well, doping of waveguide layers, and reducing the thickness of the p-emitter on the output characteristics of laser diodes were studied. Technical solutions were implemented in the chip design to minimize thermal load on the resonator mirrors. The optimization allowed increasing the operating output power of laser diodes to 11.6 W at a current of 12 A, with a maximum efficiency of 63%.

Keywords: laser diode, resonator, heterostructure, quantum well, output radiation power.