This article is cited in 1 paper

Review

InP-based electro-optic and electro-absorption modulators for the 1.5-μm spectral range

D. V. Gulyaev, K. S. Zhuravlev

Rzhanov Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Sciences, 630090, Novosibirsk, Russia

Abstract: The review examines telecom electro-optic modulators made of group III–V compound semiconductor material composed of indium phosphide. The operation principles of modulators and issues of heterostructure and modulator design optimization are considered; the results of recent developments and the achieved parameters of modulators are presented.

Keywords: electro-optic modulator, electro-absorption modulator, InP, InGaAlAs, quantum wells, Stark effect.

Received: 29.11.2023
Accepted: 01.02.2024

 English version: Quantum Electronics, 2024, 51:suppl. 2, S101–S116