S. O. Slipchenko, D. N. Romanovich, P. S. Gavrina, D. A. Veselov, T. A. Bagaev, M. A. Ladugin, A. A. Marmalyuk, N. A. Pikhtin, “High-power mesa-stripe semiconductor lasers (910 nm) with an ultra-wide emitting aperture based on tunnel-coupled InGaAs/AlGaAs/GaAs heterostructures”, Kvantovaya Elektronika, 2022, Volume 52, Number 2,Pages <nobr>174

This article is cited in 3 papers

Lasers

High-power mesa-stripe semiconductor lasers (910 nm) with an ultra-wide emitting aperture based on tunnel-coupled InGaAs/AlGaAs/GaAs heterostructures

S. O. Slipchenko^a, D. N. Romanovich^a, P. S. Gavrina^a, D. A. Veselov^a, T. A. Bagaev^b, M. A. Ladugin^b, A. A. Marmalyuk^b, N. A. Pikhtin^a

^a Ioffe Institute, St. Petersburg
^b JSC M. F. Stel'makh Polyus Research Institute, Moscow

Abstract: The characteristics of high-power semiconductor lasers with an 800 μm emitting aperture based on tunnel-coupled InGaAs/AlGaAs/GaAs heterostructures with three optically uncoupled laser sections are studied. The maximum power achieved under pumping by current pulses with an amplitude of 47 A and a duration of 1 μs is 110 W with the maximum active region heating not exceeding 4.7 °C. At a pulse duration of 860 μs, the maximum optical power is 22.6 W, and the decrease in the optical power to the pulse end reaches 6.7%. A decrease in the laser pulse duration to 85 μs leads to an increase in the peak laser power to 41.4 W at a pump current amplitude of 20 A.

Keywords: semiconductor laser, tunnel-coupled heterostructures.

Received: 08.11.2021