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Kvantovaya Elektronika, 2000 Volume 30, Number 4, Pages 321–322 (Mi qe1724)

Lasers

Statistical features of degradation of heterojunction lasers during aging and upon irradiation

A. A. Kochetkov

22 Research Centre, Mytischi, Moscow region

Abstract: Specific features of degradation of the GaAlAs and InGaAsP heterojunction lasers are studied during aging at 60 °C and upon irradiation by fast particles. Analytic expressions are obtained that describe an increase in the dispersion of the threshold current distribution with the time of the operating-life test and the dose of irradiation by fast particles.

PACS: 42.55.Px, 42.60.Lh, 61.80.Hg

Received: 24.11.1999


 English version:
Quantum Electronics, 2000, 30:4, 321–322

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© Steklov Math. Inst. of RAS, 2026