This article is cited in 6 papers

Special issue 'Physics of ultracold atoms and their applications'

Temperature drift contribution to frequency instability of silicon Fabry–Perot cavities

N. O. Zhadnov^a, G. A. Vishnyakova^a, K. S. Kudeyarov^a, D. S. Kryuchkov^a, K. Yu. Khabarova^ab, N. N. Kolachevsky<sup>abc

a</sup> P. N. Lebedev Physical Institute of the Russian Academy of Sciences, Moscow
^b All-Russian Scientific Research Institute of Physical-Technical and Radiotechnical Measurements, Mendeleevo, Moscow region
^c Russian Quantum Center, Moscow, Skolkovo

Abstract: A contribution of a temperature drift near the silicon thermal expansion coefficient zero point to the fractional frequency instability of a silicon cavity is analysed. The thermal expansion coefficient of silicon is measured by an optical method near the zero point T₀ = 123 K. It is shown that the frequency instability due to cavity temperature drifts observed in an experiment does not exceed a thermal noise limit at averaging intervals of up to 20 s.

Keywords: ultrastable cavities, single-crystal silicon, optical method for measuring thermal expansion coefficient, temperature drift, fractional frequency instability.

Received: 12.03.2019
Revised: 27.03.2019

 English version: Quantum Electronics, 2019, 49:5, 424–428

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