This article is cited in 5 papers

Laser applications and other topics in quantum electronics

Analysis of the influence of geometrical dimensions and external magnetic field on optical properties of InGaAs/GaAs quantum-dot slow light devices

B. Choupanzadeh, H. Katuzian, R. Kohandani

Photonics Research Lab, Electrical Engineering Department, Amirkabir University of Technology, Iran

Abstract: The effect of the size of quantum dots (QDs) and an external magnetic field on InGaAs/GaAs QD slow light devices based on coherent population oscillations (CPOs) is simulated. Physical parameters of QDs, such as radius and height, are varied around their central mean values, which are assumed to be 8 and 5 nm, respectively. An attempt is made to obtain much better optical characteristics by applying a strong external magnetic field. The methods used to improve the optical properties of a QD slow light device, such as the slow down factor (SDF), bandwidth and exciton binding energy, are discussed. It is shown that a QD slow light device makes it possible to shift the centre frequency in a range of 5 THz and to achieve a slow down factor of 5000.

Keywords: quantum dots, excitonic population oscillations, slow light, shift of the centre frequency, slow down factor.

Received: 05.10.2017
Revised: 06.01.2018

 English version: Quantum Electronics, 2018, 48:6, 582–588

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