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JOURNALS // Kvantovaya Elektronika // Archive

Kvantovaya Elektronika, 2016 Volume 46, Number 3, Pages 218–222 (Mi qe16340)

This article is cited in 9 papers

Control of laser radiation parameters

Highly efficient, versatile, self-Q-switched, high-repetition-rate microchip laser generating Ince–Gaussian modes for optical trapping

Jun Dong, Yu He, Xiao Zhou, Shengchuang Bai

Department of Electronics Engineering, School of Information Science and Engineering, Xiamen, China

Abstract: Lasers operating in the Ince-Gaussian (IG) mode have potential applications for optical manipulation of microparticles and formation of optical vortices, as well as for optical trapping and optical tweezers. Versatile, self-Q-switched, high-peak-power, high-repetition-rate Cr, Nd:YAG microchip lasers operating in the IG mode are implemented under tilted, tightly focused laser-diode pumping. An average output power of over 2 W is obtained at an absorbed pump power of 6.4 W. The highest optical-to-optical efficiency of 33.2% is achieved at an absorbed pump power of 3.9 W. Laser pulses with a pulse energy of 7.5 μJ, pulse width of 3.5 ns and peak power of over 2 kW are obtained. A repetition rate up to 335 kHz is reached at an absorbed pump power of 5.8 W. Highly efficient, versatile, IG-mode lasers with a high repetition rate and a high peak power ensure a better flexibility in particle manipulation and optical trapping.

Keywords: Ince–Guassian modes; Cr, Nd:YAG microchip lasers; laser-diode pumping, self-Q switching.

Received: 02.04.2015
Revised: 13.11.2015


 English version:
Quantum Electronics, 2016, 46:3, 218–222

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