This article is cited in 12 papers

Sources for EUV lithography

High-brightness laser-induced EUV source based on tin plasma with an unlimited lifetime of electrodes

A. Yu. Vinokhodov^a, V. M. Krivtsun^ba, A. A. Lash^a, V. M. Borisov^c, O. F. Yakushev^da, K. N. Koshelev<sup>ba

a</sup> EUV Labs, Ltd., Troitsk, Moscow
^b Institute of Spectroscopy, Russian Academy of Sciences, Troitsk, Moscow
^c Troitsk Institute for Innovation and Fusion Research
^d P. N. Lebedev Physical Institute, Russian Academy of Sciences, Moscow

Abstract: Characteristics of a source of laser-induced radiation in the extreme ultraviolet (EUV) range, obtained in a discharge between two jets of liquid tin, are investigated. The possibility of designing a high-brightness EUV source on this basis for employing in mask inspection techniques in projection EUV lithography is demonstrated. The average efficiency of converting the electric energy to radiation in the spectral range of 13.5±0.135 nm is approximately 2%/2π sr with the size of emitting plasma 0.2±0.35 mm. The possibility of producing a EUV source with a brightness of about 200&nmbsp;W (mm²sr)^-1 is demonstrated.

Keywords: EUV-range radiation source, EUV lithography, plasma, discharge, liquid tin jet, source radiance.

Received: 19.08.2014

 English version: Quantum Electronics, 2016, 46:1, 81–87

Bibliographic databases:

• 
• 
•