This article is cited in 15 papers

Lasers

Laser generation in polycrystalline Cr²⁺:ZnSe with undoped faces

D. V. Savin^ab, E. M. Gavrishchuk^ab, V. B. Ikonnikov^ab, O. N. Eremeykin^abc, A. S. Egorov<sup>ca

a</sup> N. I. Lobachevski State University of Nizhni Novgorod
^b Institute of Chemistry of High-Purity Substances RAS, Nizhnii Novgorod
^c "Intellectual Systems NN" LLC, Dzerzhinsk, Nizhegorodskii Region

Abstract: An original method has been suggested for producing polycrystalline Cr²⁺:ZnSe samples with undoped faces. Generation characteristics of a Cr²⁺:ZnSe laser are studied under pulse-periodic pumping by a Tm³⁺:YLF-laser. The efficiency of converting the pump radiation into laser generation at a wavelength of 2350 nm is 20%. Cr²⁺:ZnSe samples exhibit high resistance to surface breakdown.

Keywords: diode pumping, Tm³⁺:YLF laser, Cr²⁺:ZnSe laser, undoped faces.

PACS: 42.55.Rz, 42.60.Lh

Received: 12.11.2014
Revised: 26.11.2014

 English version: Quantum Electronics, 2015, 45:1, 8–10

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