This article is cited in 3 papers

Letters

Nanostructuring of single-crystal silicon carbide by picosecond UV laser radiation

E. V. Barmina^ab, A. A. Serkov^ab, G. A. Shafeev<sup>ab

a</sup> Wave Research Center of Prokhorov General Physics Institute, Russian Academy of Sciences, Moscow
^b Ltd. Energomashtehnika, Moscow

Abstract: Surface nanostructures are produced on single-crystal 4H-SiC by laser ablation in water using a Nd : YAG laser (355-nm wavelength, 10-ps pulse duration) as a radiation source. The morphology of the nanostructured surface and the nanostructure size distribution are examined in relation to the energy density of the incident laser beam. The potential of the described process for improving the luminosity of light-emitting diodes on silicon carbide substrates is discussed.

Keywords: silicon carbide, light-emitting diodes, GaN, lasers, ablation, nanostructures.

PACS: 79.20.Eb, 81.05.U-, 81.07.-b, 42.25.Gy

Received: 24.10.2013

 English version: Quantum Electronics, 2013, 43:12, 1091–1093

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