This article is cited in 6 papers

Lasers

Efficiency of GaInAs/GaAs quantum-well lasers upon inhomogeneous excitation of quantum wells

D. V. Ushakov^a, A. A. Afonenko^a, V. Ya. Aleshkin<sup>b

a</sup> Belarusian State University, Minsk
^b Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhnii Novgorod

Abstract: A model for calculating the power characteristics of laser structures taking into account inhomogeneous excitation of quantum wells (QWs), recombination in the barrier regions, and nonlinear gain effects is developed. It is shown that, with increasing number of QWs, the output power of the Ga_0.8In_0.2As/GaAs/InGaP structures at first considerably increases and then slightly decreases. In a wide range of injection currents, the optimal number of QWs is 5 ± 1. The inhomogeneity of QW excitation increases with increasing injection current and decreases the laser power compared to homogeneous excitation.

Keywords: GaInAs/GaAs laser, quantum well, inhomogeneous excitation, lasing efficiency.

PACS: 42.55.Px, 42.60.Lh, 73.21.Fg, 78.67.De

Received: 29.03.2013
Revised: 17.07.2013

 English version: Quantum Electronics, 2013, 43:11, 999–1002

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