This article is cited in 3 papers

Letters

Nearest-IR superluminescent diodes with a 100-nm spectral width

S. N. Il'chenko^a, M. A. Ladugin^b, A. A. Marmalyuk^c, S. D. Yakubovich<sup>d

a</sup> Superlum Diodes Ltd., Moscow
^b "Sigm Plyus" Ltd., Moscow
^c Polyus Research and Development Institute named after M. F. Stel'makh, Moscow
^d Moscow State Institute of Radio-Engineering, Electronics and Automation (Technical University)

Abstract: This paper presents an experimental study of quantum well superluminescent diodes with an extremely thin (InGa)As active layer. Under cw injection, the output power of such diodes is several milliwatts, with a centre wavelength of 830 nm and emission bandwidth of about 100 nm.

Keywords: superluminescent diode, optical coherence tomography.

PACS: 42.55.Px, 78.66.-w, 42.60.Lh

Received: 19.09.2012

 English version: Quantum Electronics, 2012, 42:11, 961–963

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