This article is cited in 32 papers

Photonics and nanotechnology

Pulsed laser ablation of binary semiconductors: mechanisms of vaporisation and cluster formation

A. V. Bulgakov^a, A. B. Evtushenko^a, Yu. G. Shukhov^a, I. Ozerov^b, W. Marin<sup>b

a</sup> S.S. Kutateladze Institute of Thermophysics, Siberian Division of the Russian Academy of Sciences, Novosibirsk
^b Université de la Mediterranée, CINaM, UPR CNRS, Marseille, France

Abstract: Formation of small clusters during pulsed ablation of two binary semiconductors, zinc oxide and indium phosphide, in vacuum by UV, visible, and IR laser radiation is comparatively studied. The irradiation conditions favourable for generation of neutral and charged Zn_nO_m and In_nP_m clusters of different stoichiometry in the ablation products are found. The size and composition of the clusters, their expansion dynamics and reactivity are analysed by time-of-flight mass spectrometry. A particular attention is paid to the mechanisms of ZnO and InP ablation as a function of laser fluence, with the use of different ablation models. It is established that ZnO evapourates congruently in a wide range of irradiation conditions, while InP ablation leads to enrichment of the target surface with indium. It is shown that this radically different character of semiconductor ablation determines the composition of the nanostructures formed: zinc oxide clusters are mainly stoichiometric, whereas In_nP_m particles are significantly enriched with indium.

PACS: 79.20.Ds, 36.40.-c, 52.38.Mf, 81.07.-b

Received: 19.08.2010

 English version: Quantum Electronics, 2010, 40:11, 1021–1033

Bibliographic databases:

• 
• 
• 
•