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JOURNALS // Kvantovaya Elektronika // Archive

Kvantovaya Elektronika, 2009 Volume 39, Number 8, Pages 727–730 (Mi qe14087)

This article is cited in 4 papers

Lasers

Intracavity terahertz difference-frequency generation in an InGaAs-quantum-well two-frequency InGaAsP/InP laser

V. Ya. Aleshkin, A. A. Dubinov

Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhnii Novgorod

Abstract: The scheme of a semiconductor quantum-well laser is proposed for the simultaneous generation of TE0 and TM0 modes with different frequencies in the near-IR region. The possibility of efficient terahertz difference-frequency generation by this laser is considered. It is shown that for the 100-μm-wide active region of the laser and for the 1-W near-IR modes, the laser power at the difference frequency in the 1 — 8-THz region can achieve ~1 μmW at room temperature.

PACS: 42.55.Px, 42.60.By

Received: 24.02.2009


 English version:
Quantum Electronics, 2009, 39:8, 727–730

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