Abstract:
We report stimulated near-IR emission in optically pumped InGaAs/AlGaInAs heterostructures and stimulated-emission wavelength switching from 1.9 to 1.5 and then to 1.2 μm with increasing optical pump intensity. The wavelength switching behaviour of the heterostructures depends on their geometry (band-gap profile) and the competition between stimulated emissions at different frequencies in different parts of the system.