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Kvantovaya Elektronika, 2009 Volume 39, Number 3, Pages 247–250 (Mi qe13903)

This article is cited in 2 papers

Control of laser radiation parameters

Stimulated-emission wavelength switching in optically pumped InGaAs/AlGaInAs laser heterostructures

A. A. Andronova, Yu. N. Nozdrina, A. V. Okomel'kova, A. N. Yablonskiia, A. A. Marmalyukb, Yu. L. Ryaboshtanb

a Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhnii Novgorod
b "Sigm Plyus" Ltd., Moscow

Abstract: We report stimulated near-IR emission in optically pumped InGaAs/AlGaInAs heterostructures and stimulated-emission wavelength switching from 1.9 to 1.5 and then to 1.2 μm with increasing optical pump intensity. The wavelength switching behaviour of the heterostructures depends on their geometry (band-gap profile) and the competition between stimulated emissions at different frequencies in different parts of the system.

PACS: 42.55.Px, 78.45.+h, 78.55.Et

Received: 29.04.2008
Revised: 10.11.2008


 English version:
Quantum Electronics, 2009, 39:3, 247–250

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