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JOURNALS // Kvantovaya Elektronika // Archive

Kvantovaya Elektronika, 2007 Volume 37, Number 6, Pages 575–579 (Mi qe13485)

This article is cited in 4 papers

Fiber and integrated optics

Defects of a phosphosilicate glass exposed to the 193-nm radiation

Yu. V. Larionov, V. O. Sokolov, V. G. Plotnichenko

Fiber Optics Research Center of the Russian Academy of Sciences, Moscow

Abstract: Induced absorption is measured in a hydrogen-unloaded phosphosilicate glass (PSG) in spectral ranges from 140 to 850 nm and from 1000 to 1700 nm before and after its exposure to the 193-nm radiation. It is shown that the induced-absorption bands in the range between 140 and 300 nm do not coincide with the bands observed earlier after exposing a PSG to X-rays. It is assumed that the photorefractive effect in the PSG is related to variations induced in the glass network rather than to defects responsible for the induced-absorption bands.

PACS: 42.81.Cn, 79.20.Ds, 61.80.Ba

Received: 22.10.2006


 English version:
Quantum Electronics, 2007, 37:6, 575–579

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