This article is cited in 8 papers

Lasers

Superluminescent InAs/AlGaAs/GaAs quantum dot heterostructure diodes emitting in the 1100—1230-nm spectral range

E. V. Andreeva^a, A. E. Zhukov^b, V. V. Prokhorov^a, V. M. Ustinov^b, S. D. Yakubovich<sup>c

a</sup> Superlum Diodes Ltd., Moscow
^b Ioffe Institute, St. Petersburg
^c Moscow State Institute of Radio-Engineering, Electronics and Automation (Technical University)

Abstract: Superluminescent diodes (SLDs) based on a multilayer InAs/AlGaAs quantum dot heterostructure are studied. It is shown that the emission spectra of SLDs strongly depend on the active-channel length and injection current. In particular, the conditions are determined under which the emission spectrum covers the spectral range between 1100 and 1230 nm due to the levelling of the intensities of quantum transitions from the first and second excited states. Commercial SLDs emitting in this spectral range are not available at present. The SLD design provides cw operation and efficient coupling with a single-mode fibre. The output power achieves 1 mW in free space and 0.5 mW when coupled out through a fibre. Preliminary resource tests have demonstrated a rather high reliability of the developed SLDs.

PACS: 42.55.Px, 42.60.Jf, 42.60.Lh

Received: 01.02.2006

 English version: Quantum Electronics, 2006, 36:6, 527–531

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