Abstract:
An investigation is reported of the stability of steady-state injection locking of a solid-state chip laser. It is shown that, in contrast to semiconductor lasers, the buildup of relaxation oscillations occurs only in a very small part of the injection-locking zone. The conditions are found for bistability in the steady-state injection-locking regime. It is demonstrated that detuning of the injected-signal frequency from the centre of the gain line results in a considerable asymmetry of the beat regimes on different sides of the injection-locking zone. Numerical simulation reveals bistable quasiperiodic regimes in which hf sinusoidal beats are modulated by pulses of self-excited relaxation oscillations.