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JOURNALS // Kvantovaya Elektronika // Archive

Kvantovaya Elektronika, 1988 Volume 15, Number 7, Pages 1462–1464 (Mi qe12327)

This article is cited in 11 papers

Laser applications and other aspects of quantum electronics

Temperature dependence of the gain in Y3Al5O12:Cr3+:Tm3+:Ho3+

A. A. Nikitichev


Abstract: A study was made of the influence of the coactivator concentration on the temperature dependence of the gain due to the 5I75I8 transition in the Ho3+ ion (λl ≈ 2.09 μm) in Y3Al5O12:Cr3+:Tm3+:Ho3+ crystals. It was found that the temperature-activated process of loss of the inversion involved the summation of excitations of the upper active level and the 3F4 level of Tm3+. Direct measurements showed that a strong interaction occurred between the 3F4 (Tm) and 5I7 (Ho) states.

UDC: 621.373.826.038.825.2

PACS: 42.55.Rz, 42.60.Lh, 42.70.Hj

Received: 12.08.1987


 English version:
Soviet Journal of Quantum Electronics, 1988, 18:7, 918–919

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© Steklov Math. Inst. of RAS, 2026