This article is cited in 9 papers

Brief Communications

Pulse avalanche photodetector based on a metal-insulator-semiconductor structure

N. I. Gol'braikh, A. F. Plotnikov, V. È. Shubin


Abstract: An investigation was made of avalanche multiplication of carriers in the surface region of a metal–insulator–semiconductor (MIS) structure. Transient photocurrents resulting from such multiplication were observed in a surface layer of silicon in an Au–SiO₂–Si structure. The results obtained indicated that avalanche multiplication of carriers in MIS structures could be used for detection of light.

UDC: 621.383.4

PACS: 42.75.Ng, 85.60.Gz

Received: 12.02.1975
Revised: 01.09.1975

 English version: Soviet Journal of Quantum Electronics, 1975, 5:12, 1435–1436