This article is cited in 6 papers

Brief Communications

PbSnTe–PbTe heterojunction laser emitting at λ = 10 μ

L. N. Kurbatov, A. D. Britov, S. M. Karavaev, Yu. I. Gorina, G. A. Kalyuzhnaya, P. M. Starik


Abstract: An n-PbTe–p-Pb_1–xSn_xTe heterojunction laser was fabricated by epitaxial growth of PbTe from the vapor phase on a Pb_0.83Sn_0.17Te substrate. Stimulated emission of the TE modes was obtained at wavelengths of 10.2 μ at 77°K and 12.2 μ at 33°K. Continuous stimulated emission was obtained at liquid helium temperatures.

UDC: 621.378.35

PACS: 42.60.J

Received: 26.03.1975

 English version: Soviet Journal of Quantum Electronics, 1975, 5:9, 1137–1139