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JOURNALS // Kvantovaya Elektronika // Archive

Kvantovaya Elektronika, 1976 Volume 3, Number 10, Pages 2238–2242 (Mi qe11935)

This article is cited in 2 papers

Laser diodes made of PbSnTe emitting in the 5-15 μ range

A. D. Britov, S. M. Karavaev, G. A. Kalyuzhnaya, Yu. I. Gorina, A. L. Kurbatov, K. V. Kiseleva, P. M. Starik


Abstract: Laser diodes were made from PbSnTe solid solutions of various compositions on which films with a wider energy gap were deposited by the vapor epitaxy method. Variation of temperature of these diodes made it possible to obtain stimulated emission in the range 5–15 μ.

UDC: 621.375.826

PACS: 78.45.+h, 81.20.Dt

Received: 18.03.1976


 English version:
Soviet Journal of Quantum Electronics, 1976, 6:10, 1217–1219


© Steklov Math. Inst. of RAS, 2026