Abstract:
An investigation was made of catastrophic degradation of electron-beam-pumped gallium arsenide lasers operating at temperatures of 80 and 300°K. The critical radiation density in the semiconductor resonator resulting in its damage ranged from 2 to 15 MW/cm2, depending on the temperature, optical homogeneity, and quality of the surface treatment of the crystal. An analysis was made of the mechanisms of the fracture of gallium arsenide crystals under the action of their own laser radiation.
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