Abstract:
The characteristics of a point-contact W–Ni diode were investigated under conditions of direct and heterodyne detection of infrared radiation (λ = 10.6 μ) and direct detection of visible radiation (λ = 0.63 μ). The detectivity of the Schottky barrier in this diode was found to have an upper limit at infrared frequencies. Methods for increasing the detectivity of metal-oxide-metal diodes (additional oxidation and ion implantation) were investigated.