This article is cited in 14 papers

Letters to the editor

Generation of hard x-ray radiation by irradiation of porous silicon with ultraintense femtosecond laser pulses

R. V. Volkov^a, V. M. Gordienko^a, M. S. Dzhidzhoev^b, B. V. Kamenev^b, P. K. Kashkarov^b, Yu. V. Ponomarev^b, A. B. Savel'ev^a, V. Yu. Timoshenko^b, A. A. Shashkov<sup>b

a</sup> International Laser Center of Moscow State University
^b Lomonosov Moscow State University, Faculty of Physics

Abstract: Irradiation of porous (with porosity in excess of 70%) silicon target with femtosecond laser pulses of 10¹⁶ W cm^–2 intensity increased by a factor of 3.5 the efficiency of generation of hard x-ray radiation with photon energies E > 8 keV. The increase was 30-fold for E > 2.5 keV. The relationship between this effect and the parameters of the luminescence emitted by porous silicon was investigated.

PACS: 52.25.Nr, 52.50.Jm, 61.80.Ba

Received: 30.10.1997

 English version: Quantum Electronics, 1998, 28:1, 1–2

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