Brief Communications

Influence of imperfections in the crystal structure of gallium arsenide on the parameters of electron-beam excited lasers

O. N. Grigor'ev, I. V. Gridneva, E. M. Krasavina, I. V. Kryukova, Yu. V. Mil'man, S. I. Chugunova


Abstract: An investigation was made of the parameters of the radiation emitted by electron-beam-excited lasers made of gallium arsenide single crystals prepared by different methods. A correlation was established between the radiative characteristics of these lasers and the degree of structure imperfection of the crystals, determined by x-ray diffraction methods. The high efficiency and homogeneity of the laser emission from the samples prepared by the Stockbarger method was attributed to a high quality of the structure of crystals produced in this way.

UDC: 621.378.35

PACS: 42.60.J

Received: 24.10.1974

 English version: Soviet Journal of Quantum Electronics, 1975, 5:5, 577–579