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JOURNALS // Kvantovaya Elektronika // Archive

Kvantovaya Elektronika, 1976 Volume 3, Number 3, Pages 612–614 (Mi qe11023)

This article is cited in 4 papers

Brief Communications

Electron-beam-pumped ZnSe-ZnS heterolaser

O. V. Bogdankevich, B. M. Lavrushin, O. V. Matveev, V. F. Pevtsov, M. M. Khalimon


Abstract: Heterostructures of the ZnSe-GaAs, CdSe-CdS, and ZnSe-ZnS type were fabricated and stimulated emission was obtained when these structures were excited by an electron beam. The best results were obtained for the ZnSe-ZnS heterostructure: the laser threshold was 6 A/cm2, the output power was 50 W (for E0 = 50 keV incident electrons), and the efficiency was 6 %.

UDC: 621.378.35

PACS: 42.60.Jf

Received: 11.07.1975


 English version:
Soviet Journal of Quantum Electronics, 1976, 6:3, 329–331


© Steklov Math. Inst. of RAS, 2026