Abstract:
Heterostructures of the ZnSe-GaAs, CdSe-CdS, and ZnSe-ZnS type were fabricated and stimulated emission was obtained when these structures were excited by an electron beam. The best results were obtained for the ZnSe-ZnS heterostructure: the laser threshold was 6 A/cm2, the output power was 50 W (for E0 = 50 keV incident electrons), and the efficiency was 6 %.