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JOURNALS // Kvantovaya Elektronika // Archive

Kvantovaya Elektronika, 1975 Volume 2, Number 1, Pages 163–165 (Mi qe10804)

This article is cited in 3 papers

Brief Communications

Semiconductor laser with a distributed feedback

V. N. Luk'yanov, N. V. Shelkov, S. D. Yakubovich


Abstract: Stimulated emission was obtained from an optically pumped gallium arsenide laser with a distributed feedback. The feedback was produced by a diffraction grating formed on the surface of a p –type GaAs layer prepared by the diffusion of zinc into an n –type substrate. The grating was in optical contact with the active layer and its period satisfied the Bragg condition for a guided mode within the gain band of the laser. For the selected Bragg scattering order, the radiation was extracted at right angles to the grating surface. The far-field distribution consisted of a single lobe with a divergence of 5–20', which corresponded to the emission from one to five randomly distributed modes whose frequencies depended on the position of the excited region in the laser.

UDC: 621.378.325

PACS: 42.55.Px, 42.79.Dj, 42.60.Jf

Received: 25.07.1974


 English version:
Soviet Journal of Quantum Electronics, 1975, 5:1, 99–100


© Steklov Math. Inst. of RAS, 2026