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JOURNALS // Kvantovaya Elektronika // Archive

Kvantovaya Elektronika, 1980 Volume 7, Number 9, Pages 2054–2057 (Mi qe10749)

Brief Communications

Ion-plasma treatment of mirrors of an injection-laser resonator

V. E. Borisenko, S. A. Konstantinova, G. T. Pak, G. I. Ryabtsev, I. V. Yashumov

Institute of Physics of the Academy of Sciences of the Byelorussia SSR, Minsk

Abstract: It was found experimentally that ion-plasma removal of defective surface layers from reflecting faces of twosided $GaAs-Al_xGa_{1-x}As$ heterostructure lasers made it possible to reduce the threshold current density by 15-20 procent and to increase the differential external quantum efficiency by 20-30 procent. Chemical etching of the same layers did not improve the laser parameters. Moreover, this ion-plasma treatment reduced the rate of subsequent degradation of the lasers.

UDC: 621.378.35

PACS: 42.55.Px

Received: 11.04.1980


 English version:
Soviet Journal of Quantum Electronics, 1980, 10:9, 1195–1196

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