Abstract:
It was found experimentally that ion-plasma removal of defective surface layers from reflecting faces of twosided $GaAs-Al_xGa_{1-x}As$ heterostructure lasers made it possible to reduce the threshold current density by 15-20 procent and to increase the differential external quantum efficiency by 20-30 procent. Chemical etching of the same layers did not improve the laser parameters. Moreover, this ion-plasma treatment reduced the rate of subsequent degradation of the lasers.