This article is cited in 1 paper

Influence of carrier migration processes on threshold characteristics of semiconductor lasers pumped longitudinally by an electron beam

S. L. Bazhenov, O. V. Bogdankevich, S. A. Darznek, G. A. Meerovich, V. N. Ulasyuk

All-Union scientific research Institute for metrological service, Moscow

Abstract: Calculations are made of the threshold characteristics and transverse dimensions of a luminous spot for a laser pumped by a sharply focused electron beam. The calculations involve jointly solving equations for the electromagnetic field and the active particles. It is found that for small diameters of the electron beam, the excitation threshold and size of the lasing zone are governed by electron scattering during slowing down and diffusion of carriers across the resonator axis. A comparison is made of the results of these calculations with the experiment.

UDC: 621.378.826.038.825.4

PACS: 42.55.Px

Received: 28.11.1979

 English version: Soviet Journal of Quantum Electronics, 1980, 10:7, 833–835

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